Abstract
Ettingshausen coefficient (EC) in the compositional semiconductor superlattice under the influence of electromagnetic wave (EMW) is surveyed by using the quantum kinetic equation for electrons. The analytical expressions of the Ettingshausen coefficient are numerically calculated for the GaAs/AlGaAs compositional semiconductor superlattice. It have been showed that the appearance of EMW has changed the EC’s value and the EC decreases nonlinearly when the temperature increases. Studying the dependence of EC on the magnetic field, we discovered that the resonance peaks have appeared and the superlattice period strongly affects the Ettingshausen coefficient.
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