Abstract
A study has been made of the ambient-induced changes in the conductivity, Hall coefficient, and magnetoresistance of thin samples of intrinsic germanium. The data have been analyzed by means of a recently evolved theory. The results indicate that light holes play an important role in the transport process in the surface, especially in the dependence of the zero of the Hall coefficient with increasing surface hole density. It is also shown that there is a reduction of the mobility of surface electrons in qualitative agreement with the predictions of Schrieffer. The results, in general, agree with the current view of semiconductor surfaces.
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