Magneto-piezospectroscopy of acceptors in tetrahedrally coordinated semiconductors

Abstract

This paper presents a study of the magnetospectroscopy of acceptors in elemental group-IV semiconductors in the presence of uniaxial stress. We use a formulation of the effect of stress on the transition probabilities for optical absorption which represents a considerable simplification over previous treatments. We give an analysis of both the longitudinal and the transverse magneto-spectroscopy of acceptors in semiconductors having the diamond structure under uniaxial stress. The results are used to determine the values of theg-factors for two levels of Ga acceptors in Ge by comparing the present results with the experimental data.