Abstract
Magneto-optics of heterostructures with an InGaAs/GaAs quantum well (QW) and a 3–5 nm spaced ultra-thin ferromagnetic δ-layer of Mn in the GaAs barrier is investigated in detail. While nonmagnetic structures demonstrate very low degree of circular polarization PC of QW photoluminescence, the existence of the close Mn δ-layer gives rise to high values of PC even above its Curie temperature TC ∼ 35 K. Fast growth of PC and Zeeman splitting of the QW emission band, observed at low B < 0.2 T, is followed by a slow linear increase at B > 0.5 T in heterostructures with strictly oriented GaAs (001) substrates. The characteristic fast increase slows down with temperature and disappears above TC. The effect depends non-monotonically on QW depth and is explained by the model of strong QW fluctuation potential caused by the highly charged Mn δ-layer. The spin polarization of carriers is believed to be related to the effective (p–d)-exchange interaction of holes in the QW with the ferromagnetic δ-layer and to appear due to a normal-to-plane magnetization emerging from the plane of the δ-layer with saturation of the normal component of magnetization at high magnetic fields.
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