Abstract

M-type barium hexagonal ferrites BaFe12O19 (BaM) films considered for new devices that operate in the 40-70 GHz range with small or zero applied magnetic fields were characterized by magneto-optical (MO) complex polar “Kerr” effect (PKE) spectroscopy, MO magnetometry, and spectral ellipsometry (SE). The textured polycrystalline films were grown on Pt(111)/TiO2 template on Si wafer using metallo-organic decomposition technique (MOD) followed by rapid thermal annealing. In the films grown in one, two and three MOD iterations, the thickness was evaluated by SE and transmission electron microscopy. The film thickness ranged from 30 nm to 50 nm per MOD iteration. The best films display out-of-plane effective magnetic anisotropy field of 13 kOe, high perpendicular remanent magnetization and ferromagnetic resonance linewidth of 340 Oe at 60 GHz. The coercivity deduced from the MO hysteresis loops ranged between 0.25 kOe and 0.52 kOe. The SE and PKE spectra were taken at photon energies from 0.7 eV to 6.4 eV and from 1.2 eV to 4.8 eV, respectively. The PKE spectra display the structure observed on BaM single crystal natural faces normal to the c-axis. They are consistent with magnetoplumbite structure, with high degree of grain c-axis ordering, absence of foreign phases and Fe valence-exchange mechanism. Single phase nature of the films was further confirmed by grazing incidence X-ray diffraction and 57Fe nuclear magnetic resonance at 4.2 K.

Highlights

  • M-type barium hexagonal ferrites BaFe12O19 (BaM) are important for microwave, millimeter and sub-millimeter wave devices

  • M-type barium hexagonal ferrites BaFe12O19 (BaM) films considered for new devices that operate in the 40-70 GHz range with small or zero applied magnetic fields were characterized by magneto-optical (MO) complex polar “Kerr” effect (PKE) spectroscopy, MO magnetometry, and spectral ellipsometry (SE)

  • The textured polycrystalline films were grown on Pt(111)/TiO2 template on Si wafer using metallo-organic decomposition technique (MOD) followed by rapid thermal annealing

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Summary

Introduction

M-type barium hexagonal ferrites BaFe12O19 (BaM) are important for microwave, millimeter and sub-millimeter wave devices. Several deposition techniques were investigated with the aim to grow BaM films on semiconductor substrates with desirable physical properties, in particular, low ferromagnetic resonance (FMR) linewidth, ΔH, and high effective magnetic anisotropy field, HA. High hysteresis loop squareness would enable device operation with small or zero applied magnetic fields [1,2,3,4,5]. The present study is focused on textured polycrystalline BaM films grown on Pt/Si substrates using repeated cycles of metallo-organic decomposition technique (MOD) followed by rapid thermal annealing [6,7]. The best films prepared so far display out-of-plane uniaxial effective magnetic anisotropy field, HA≈13 kOe, ΔH ≈340 Oe at 60 GHz, and high hysteresis loop squareness [7,8].

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