Abstract
The spectral and field dependences of the Transversal Kerr Effect (TKE) for (Co40Fe40B20)Z(SiO2)100-Z/Si (or С) multilayer (ML) nanocomposite-semiconductor structures were studied depending on the concentration of the nanocomposite layer ferromagnetic phase (Z), chemical of semiconductor layer and its thickness. It was found that under certain conditions an addition of thin nonmagnetic semiconductor layer leads to the increase of a multilayer magneto-optical (MO) response and softening of the magnetic properties of ML structure, up to the appearance of ferromagnetic (FM) ordering. The observed anomalous changes in magnetic and MO properties are well correlated with abrupt changes in the electric properties of ML structures. Decreasing of ferromagnetic phase concentration Z in the nanocomposite layer as well as increasing of the semiconductor layer thickness led to the disappearance of anomalous behavior in the MO properties. The results obtained are discussed taking into account the formation of a new magnetic phase on the FM granule-semiconductor interface.
Highlights
The desire in successful materials creation for spintronics is a combination of semiconducting and magnetic properties in one material
Response in the studied ML are formed both by magnetic granular layer and new magnetic phase formed on the magnetic granule – semiconductor interface
The contribution from the new magnetic phase to the resulting MO response depends on thicknesses of nanocomposite and semiconductor layers and magnetic phase concentration Z within the nanocomposite layer
Summary
The desire in successful materials creation for spintronics is a combination of semiconducting and magnetic properties in one material. [(Co45Fe45Zr10)Z(Al2O3)100-Z(X)/Si(Y)]n [7,8,9] with composite concentrations near and under the percolation threshold have shown that the addition of silicon layers leads to anomalous behaviour of electrical, magnetic and magneto-optical properties of ML with small thickness of Si (< 2nm).
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