Abstract
Band-gap magnetophotoluminescence (PL) has been used to study a high-quality, low-density p-type GaAs-${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As single quantum well at millikelvin temperatures. Two PL lines associated with recombination in the quantum well are observed. The lower-energy line, present over the entire field range, displays intensity minima at integer quantum Hall states and a marked intensity falloff to a minimum value as the Landau-level filling factor is reduced to \ensuremath{\nu}=1/3. The higher-energy line emerges in the extreme quantum regime \ensuremath{\nu}1, and shows an intensity maximum at \ensuremath{\nu}=1/3. These intensity features are quenched with increased temperature. The results show remarkable similarities with optical studies of two-dimensional electron systems.
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