Abstract
A new application of garnet films with high Faraday rotation—the first direct observation of latchup effect in serially produced complementary metal-oxide-semiconductor integrated circuits (CMOS ICs)—is reported. The visualization method based on the formation of straight domain walls inside magneto-optical films along electrical current path in ICs is used. The influence of spatially uniform or focused laser irradiation on the latchup configuration and thresholds is discussed.
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