Abstract
Voltage-controlled magnetic anisotropy (VCMA) effect of Co–Fe (0.4 nm)/Gd (0.2 nm)/GdxFe100−x multilayers with varying Gd–Fe thickness (5–10 nm) and composition (x = 20–24 at.%) was investigated. The magnetic anisotropy without voltage application drastically changed from in-plane to out of plane with an increase in Gd–Fe thickness or Gd concentration. The VCMA effect was observed in all samples, but the samples with small saturation field (or switching field) showed a clear VCMA effect. The magneto-optical light modulation of the Co–Fe (0.4 nm)/Gd (0.2 nm)/Gd24Fe76 (5 nm) was successfully manipulated via voltage application at ±1 V, in which the amplitude corresponds to 0.15 degrees of the Kerr rotation with a static magnetic field of 50 Oe.
Highlights
(0.2 nm)/Gd24Fe76 light modulation (LM) layer films and devices
We investigated the Voltage-controlled magnetic anisotropy (VCMA) effect of MgO/Co–Fe/Gd/Gd– Fe stacks with varying thickness and Gd–Fe composition, demonstrating that MO LM can be directly manipulated via voltage application
Hc increased with a voltage of +1.4 V and the squareness S became 1, indicating that the magnetic anisotropy changed from in-plane to perpendicular.17 θ with the applied voltage of ±1.4 V at the external field Hex of 30 Oe was 0.1 and 0.05 degrees, respectively
Summary
(0.2 nm)/Gd24Fe76 (tGd–Fe nm) LM layer films and devices. The blue circle plot with solid lines and the green square plot with broken lines indicate the films and devices, respectively. We investigated the VCMA effect of MgO/Co–Fe/Gd/Gd– Fe stacks with varying thickness and Gd–Fe composition, demonstrating that MO LM can be directly manipulated via voltage application. The LM layer exhibited in-plane magnetic anisotropy without voltage application.
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