Abstract

GaMnAs layers fabricated on GaAs(001) substrates by laser ablation technique were studied using the magneto-optical transversal Kerr effect (TKE) (E = 0.5 - 4.0 eV) and spectral ellipsometry (E = 1.4 - 4.5 eV). Obtained spectral, temperature and magnetic field TKE dependences shown that the used technique allowed us to obtain ferromagnetic (Ga,Mn)As layers, whose composition was close to single-phase one (without MnAs inclusions). Spectral dependences of the off-diagonal components (e’ = e’1 - ie’2) of the permittivity tensor and also of the magnetic circular dichroism (MCD) were calculated for ferromagnetic (Ga,Mn)As sample. The calculated dependences were compared with the published magneto-optical spectra of (Ga,Mn)As layers grown by molecular beam epitaxy.

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