Abstract
The effects of a static electric field on the dispersive free-carrier magneto-optic effects in semiconductors are discussed for the conditions of low degeneracy, deformation-potential acoustic scattering, a simple parabolic band, and (1) moderately high magnetic fields, for which sH/cE≈1 but ωcτ0<1, (2) strong, but nonquantizing, fields (ωcτ0>1), and (3) the extreme quantum limit where the carriers are confined to a single Landau level. In the last case, only the situation where the static electric and magnetic fields are perpendicular is considered. In the first case, only small electric-field-induced effects occur. In the second case, only the low-frequency Voigt effect is changed much by the electric field; it is strongly anisotropic and relatively independent of magnetic field strength. In the quantum limit, an electric field should produce a considerable increase in an already large low-frequency Voigt effect. Effects of higher-order terms in relaxation time and distribution function in the quantum limit are also discussed.
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