Magneto-optical and ODEPR investigations of native defects in substrate-free LT-MBE grown GaAs

Abstract

As-grown substrate-free LT-GaAs (200°C) and annealed samples (up to 660°C) have been investigated with magnetic circular dichroism of absorption (MCDA) and optically detected electron paramagnetic resonance (MCDA-EPR) in K- and W-bands. MCDA-EPR spectra of all samples reveal several As Ga-related defects with different excitation spectra, that indicate their different structures in as-grown and annealed material. A strong change occurs in samples annealed above 400°C. The ODEPR spectra show another yet unknown defect which we attribute to a Ga vacancy-related defect. Samples annealed at 500°C exhibit EL2-like MCDA spectra. From the above band gap MCDA spectra of the EL2-like defects evidence is found for their low symmetry. The bleaching properties and spin-lattice relaxation times of the different As Ga-related defects were investigated and compared with the properties of the EL2 defect in bulk semi-insulating GaAs.