Abstract
Abstract Ge 1− x Mn x thin films were grown on SiO 2 /(1 0 0)Si substrate using molecular beam epitaxy, and their magnetic and electronic properties have been studied. The semiconductor thin films have p-type carriers and show ferromagnetic characteristics at room temperature. Saturation magnetization reaches the maximum of 330 emu/cc at around Mn 28 at%. XRD and TEM analysis showed the Ge 1− x Mn x /SiO 2 /(1 0 0)Si thin films consist of columnar shaped polycrystalline. In conjunction with the microstructure analysis, FMR and SQUID characteristics revealed that the η-Ge 3 Mn 5 phase is responsible for the ferromagnetic behavior at room temperature.
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