Abstract
We have demonstrated electric field-induced resistance change in a Cr2O3/ultra-thin La0.7Sr0.3MnO3 (LSMO) magnetic heterostructure. By the application of an electric field to the Cr2O3 gate, the resistance of the LSMO film was changed. The temperature dependence of the resistance change has a maximum around 220 K. Since the temperature dependence of the magneto-electric (ME) susceptibility of Cr2O3 has the same tendency, this resistance change is more likely due to the ME effect of the Cr2O3 film. [DOI: 10.1380/ejssnt.2010.318]
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