Abstract

Two series of Fe81-xNixGa19/Si (100) and Fe81-yNiyGa19/glass films, where x or y = 0 26at.%Ni, were made by the magnetron sputtering method. We have performed three kinds of experiments on these films:the saturation magnetostriction (λS); [ii] the nanoindentation; and [iii] magnetic hysteresis-loop measurements. The main findings of this study are summarized below:[ λSreachesa local maximum, when x = 22 and [B] the Youngs modulus, Ef, of the Fe-Ni-Ga film deposited on a Si (100) substrate is larger than that (the same film) deposited on a glass substrate. We conclude thatthe Fe59Ni22Ga19film could beemployed in a low-field and low-costnano-magnetic switching device.

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