Abstract
The magnetization switching of Co/sub 0.25/Pd/sub 0.75/ alloy film on Pb(Zr/sub 0.52/Ti/sub 0.48/)O/sub 3/ substrate was studied by measuring the polar Kerr rotation hysteresis loops and their electric field dependencies. It was found that the direction of spontaneous magnetization in CoPd alloy film was easily controllable via the inverse piezoelectric effect of the lead zirconate titanate layer, judging from the change of the Kerr rotation hysteresis loops with respect to an applied voltage. Since the magnetization direction maintains its initial state even when the applied voltage is turned off, this system is applicable to a future nonvolatile memory device.
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