Abstract
Injection of pure spin current using a nonlocal geometry is a promising method for controlling magnetization in spintronic devices from the viewpoints of increasing freedom in device structure and avoiding problems related to charge current. Here, we report an experimental demonstration of magnetization switching of a perpendicular magnetic nanodot induced by vertical injection of pure spin current from a spin polarizer with perpendicular magnetization. In comparison with direct spin injection, the current amplitude required for magnetization switching is of the same order and shows smaller asymmetry between parallel-to-antiparallel and antiparallel-to-parallel switching. Simulation of spin accumulation reveals that, in the case of nonlocal spin injection, the spin torque is symmetric between the parallel and antiparallel configuration because current flows through only the spin polarizer, not the magnetic nanodot. This characteristic of nonlocal spin injection is the origin of the smaller asymmetry of the switching current and can be advantageous in spintronic applications.
Highlights
Injection of pure spin current using a nonlocal geometry is a promising method for controlling magnetization in spintronic devices from the viewpoints of increasing freedom in device structure and avoiding problems related to charge current
We experimentally demonstrated the magnetization switching of a perpendicular magnetic nanodot induced by injection of pure spin current using a nonlocal geometry
Because perpendicular spin is injected when a perpendicular magnetic material is employed as a polarizer, the magnetization switching requires no additional assist such as an external field, which is one of the advantages of nonlocal spin injection over spin-orbit torque (SOT)
Summary
Injection of pure spin current using a nonlocal geometry is a promising method for controlling magnetization in spintronic devices from the viewpoints of increasing freedom in device structure and avoiding problems related to charge current. This characteristic increases freedom in device structure and frees the active magnetic layer from problems related to the charge current, such as heat generation and Oersted fields Owing to these advantages, nonlocal spin injection can realize a new type of MTJ and STO, which we discuss at the end of this section in comparison with the sample used in this study. We demonstrate magnetization switching induced by pure spin current using a vertical nonlocal spin injection structure with a perpendicular active magnetic layer (free layer) and a perpendicular spin polarizer. This type of three-terminal MTJ using an in-plane magnetic material was experimentally demonstrated in ref
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
