Abstract
We theoretically investigate the switching characteristics of ferromagnets in the superlattice-like magnetic tunnel junction devices due to temperature bias. The critical switching spin current obstructs the anomaly flipping of magnetization in the stable condition of operation. We exploit the optical analog of anti-reflection in MTJ device design to harness its boxcar transmission feature. Using the non-equilibrium Green’s function spin transport formalism, we analyze the thermal spin-transfer torque switching in normal and anti-reflected superlattice configurations. It is observed that the operating temperature for complete flipping of magnetization in the case of anti-reflected superlattice is quite smaller than the normal superlattice. We also evaluate the thermal tunnel magnetoresistance (TMR) of both the device configurations and conclude that the switching and TMR ratio are the two different phenomena when a device operates on the temperature gradient alone. The discussed temperature variation is practically achievable with localized short laser pulses.
Highlights
Spintronic devices, these days, are the fast and energy-efficient technique in information storage technology
We theoretically investigate the switching characteristics of ferromagnets in the superlattice-like magnetic tunnel junction devices due to temperature bias
We evaluate the thermal tunnel magnetoresistance (TMR) of both the device configurations and conclude that the switching and TMR ratio are the two different phenomena when a device operates on the temperature gradient alone
Summary
Spintronic devices, these days, are the fast and energy-efficient technique in information storage technology. Electrons tunnel through the barrier with their conserved spins.. For the memory read/write operations, the parameter spintransfer torque (STT) of an MTJ device is analyzed.. The STT effect is a mechanism that acts on a free thin ferromagnet in the device arrangement, which rotates its magnetization. Since the STT process depends on the spin current that flows through the device, this dramatically reduces the energy requirements and the use of an external magnetic field for switching. Using the spin-torque technique that acts very locally, the cramming of more units for high-density magnetic memories is possible. The precise manipulation of magnetic moments has very high potential applications for magnetization switching, domain wall & skyrmion motion, spin logic devices and STT nano-oscillators.. We theoretically compute the TSTT and analyze the switching characteristics of various superlattice configurations
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