Abstract

This chapter describes magnetization behavior under a static magnetic field. It covers both reversible magnetization rotation and irreversible magnetization switching. Under an applied field, magnetization rotates from its easy axis position to a new angle position. The rotation angle and switching are analyzed based on Stone‐Walfarth's Astroid. This analysis is entirely static; i.e. transient behavior is not discussed. Nonetheless, the static analysis is sufficient for the purpose of understanding the key design issues of field magnetosphere random‐access memory (MRAM). Field MRAM is named after its magnetic tunnel junction (MTJ) free‐layer magnetization switching induced by a magnetic field that is generated by the write current on the word line and bit line of the MRAM array. The chapter describes the operation issues of Astroid mode switching and the solutions. It also examines the magnetization under an applied external field.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.