Abstract
A method to cause magnetization reversal in rare earth-transition metal (RE-TM) films at low magnetic field for perpendicular magnetic random access memory (MRAM) was demonstrated. The magnetic anisotropy was changed from perpendicular to in-plane in DyFeCo and TbDyFeCo films while the mechanical tensile stress is applied to the films. It is succeeded to cause magnetization reversal at low magnetic field as low as 1/6 of original coercivity of the film
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