Abstract
Switching characteristics and magnetic domain structures in submicron size synthetic antiferromagnets (SyAF), Co90Fe10/Ru/Co90Fe10 have been studied. Submicron size elements with well defined geometry were prepared by electron beam lithography and argon ion milling for SyAFs and Co90Fe10 monolayers deposited by an ultrahigh vacuum sputtering system. Hysteresis loops were obtained by a focused magneto-optic Kerr effect (MOKE) system and magnetic images in the remanent state were observed by magnetic force microscopy (MFM). We found that the MFM images of SyAF exhibit a single domain structure even in the case of aspect ratio of 1, and there is an optimum ferromagnetic film thickness at which SyAF can obtain a single domain structure with such a low aspect ratio. The MOKE results show that the switching field is dependent on the element width and aspect ratio.
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