Abstract
In the work, magnetization-induced second-harmonic generation (MSHG) effect has been appliedto investigate the magnetization distribution changes, induced by ion implantation into thethin surface layer of garnet film.The studies were performed on the (111)-orientedepitaxial garnet film (YSmLuCa)$_3$(FeGa)$_5$O$_{12}$ implanted with $1.5\times10^{16}$~cm$^{-2}$dose of H$_2^+$ ions at $60$~keV energy. The measurements of the MSHG effectwere performed as a function of amplitude of perpendicular external magnetic field. The observed complex field dependencesof the remagnetization processes for the implanted garnet film studied were described in theframe of a phenomenological model developed. The model of the MSHG effect allows to performdecomposition of measured dependences on separate contributions originating from magnetizationcomponents related to implanted and unimplanted film volumes.
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