Abstract

Spin-based electronic devices on polymer substrates have been intensively investigated because of several advantages in terms of weight, thickness, and flexibility, compared to rigid substrates. So far, most studies have focused on maintaining the functionality of devices with minimum degradation against mechanical deformation, as induced by stretching and bending of flexible devices. Here, we applied repetitive bending stress on a flexible magnetic layer and a spin-valve structure composed of Ta/NiFe/CoFe/Cu/Ni/IrMn/Ta on a polyimide (PI) substrate. It is found that the anisotropy can be enhanced or weakened depending upon the magnetostrictive properties under stress. In the flat state after bending, due to residual compressive stress, the magnetic anisotropy of the positive magnetostrictive free layer is weakened while that of the pinned layer with negative magnetostriction is enhanced. Thus, the magnetic configuration of the spin-valve is appropriate for use as a sensor. Through the bending process, we design a prototype magnetic sensor cell array and successfully show a sensing capability by detecting magnetic microbeads. This attempt demonstrates that appropriate control of stress, induced by repetitive bending of flexible magnetic layers, can be effectively used to modify the magnetic configurations for the magnetic sensor.

Highlights

  • We applied repetitive bending stress on a flexible magnetic layer and a spin-valve structure composed of Ta/ NiFe/CoFe/Cu/Ni/IrMn/Ta on a polyimide (PI) substrate

  • Such a change in the hysteresis loop for the transfer curve in a low field range demonstrates magnetic anisotropy relaxation in the free layer. This change in MR behaviour for the free layer enables one to use the spin-valve as a field sensor as well as the 2Hk values can be increased according to the number of repetitive bending, which means that the operating range of the magnetic sensor can be varied

  • A spin-valve structure composed of a free layer (NiFe) and pinned layer (Ni) with positive and negative magnetostriction properties, respectively, is fabricated on a PI substrate

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Summary

Introduction

We applied repetitive bending stress on a flexible magnetic layer and a spin-valve structure composed of Ta/ NiFe/CoFe/Cu/Ni/IrMn/Ta on a polyimide (PI) substrate. We report an improvement in the magnetoresistance (MR) ratio of a spin-valve structure of Ta/NiFe/ CoFe/Cu/Ni/IrMn/Ta on a PI substrate, where NiFe and Ni layers are the free and pinned layers, respectively, by stress application, induced by controlled bending of the flexible layers, without post annealing processing.

Results
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