Abstract

The remanent magnetization and the magnetic anisotropy energy of 5–16 monolayer (ML)epitaxial Fe films grown on GaAs(001) were quantitatively monitored in situ bysuperconducting quantum interference device magnetometry and ferromagnetic resonanceas a function of oxygen exposure at 300 K. We find that at an oxygen dose of 10 L theperpendicular uniaxial anisotropy decreases by almost 50%, whereas the magnetization is decreased by8% only in the case of a 5 ML Fe film. The fourfold anisotropy constantK4 and in-plane uniaxial anisotropy constant , however, remain unchanged. Low-energy electron diffraction spots of the Fe surface disappearafter 6 L of oxygen, indicating a disordered Fe oxide growth. For exposures below 70 L we observea reduction of the remanent magnetization irrespective of the film thickness. At exposures>70 L we find a faster decrease of the remanent magnetization for the thinner films which isattributed to the finite size effect and a thickness dependent surface roughness of the ironfilms, respectively. As evidenced by Auger electron spectroscopy and x-ray diffraction, theiron oxide is found to be FeO in the first stage of oxidation, transforming intoγ-Fe2O3 at higherdosages (>1000 L).

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