Abstract
Single crystals of ZnO, TiO2 and LaAlO3 have been implanted with Ar with 100 keV and different fluencies. The Ar implanted crystals showed a week ferromagnetic-like signal between 10 K and 400 K. Hysteresis curves obtained at room temperature allowed confirming the ferromagnetic behaviour of the implanted samples. Spin polarised first principles density functional calculations were performed in the case of ZnO considering Zn interstitials and O vacancies. No net magnetic polarisation was found for O vacancies, but in the case of Zn vacancies a magnetic moment of 1μB was obtained.
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