Magnetism in Cu-Doped Rutile SnO2 Semiconductor Induced by the RKKY Interaction

Abstract

To clarify the doping effect of non-magnetic transition metal elements in SnO2, the first-principles calculations were applied to investigate the electronic structure and the magnetic interaction of Cu-doped SnO2. Density of states addresses the spin polarized 3d orbits of Cu ions, with a strong hybridization with the O 2p levels. Further discussions point out that the magnetic behavior of Cu-doped SnO2 could be interpreted by the RKKY interactions. Moreover, the defects and co-doping mechanism inducing the p-type or n-type free carriers in Cu-doped SnO2 were considered. Data showed the interstitial Sn atoms and In dopants enhance the ferromagnetic interaction, while the O vacancies greatly mediate the magnetic interaction in the system.