Abstract
The modulation of charge density and spin order in ${({\text{LaMnO}}_{3})}_{2n}/{({\text{SrMnO}}_{3})}_{n}$ $(n=1--4)$ superlattices is studied via Monte Carlo simulations of the double-exchange model. $G$-type antiferromagnetic barriers in the ${\text{SrMnO}}_{3}$ regions with low charge density are found to separate ferromagnetic ${\text{LaMnO}}_{3}$ layers with high charge density. A metal-insulator transition with increasing $n$ is observed in the direction perpendicular to the interfaces. Our simulations provide insight into how disorder-induced localization may cause the metal-insulator transition occurring at $n=3$ in experiments.
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