Abstract

We have explored the effect of magnetic rare-earth dopants substitutionally incorporated on the Ba sites of ${\mathrm{BaSnO}}_{3}$ in terms of electronic transport, magnetism, and optical properties. We show that for ${\mathrm{Ba}}_{0.92}{R}_{0.08}{\mathrm{SnO}}_{3}$ thin films (where $R=\text{La,}\phantom{\rule{4.pt}{0ex}}\text{Pr,}\phantom{\rule{4.pt}{0ex}}\text{Nd,}\phantom{\rule{4.pt}{0ex}}\text{Gd}$), there is a linear increase of mobility with carrier concentration across all doping schemes. La-doped films have the highest mobilities, followed by Pr- and Nd-doped films. Gd-doped samples have the largest ionic size mismatch with the Ba site and correspondingly the lowest carrier concentrations and electron mobilities. However, crystallinity does not appear to be a strong predictor of transport phenomena; our results suggest that point defects more than grain boundaries are key ingredients in tuning the conduction of ${\mathrm{BaSnO}}_{3}$ films grown by pulsed laser deposition. Pronounced, nonhysteretic x-ray magnetic dichroism signals are observed for Pr-, Nd-, and Gd-doped samples, indicating paramagnetism. Finally, we probe the optical constants for each of the ${\mathrm{BaSnO}}_{3}$ doping schemes and note that there is little change in the transmittance across all samples. Together these results shed light on conduction mechanisms in ${\mathrm{BaSnO}}_{3}$ doped with rare-earth cations.

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