Abstract
Fe/Si multilayered films have been prepared by ion-beam sputtering. The dependence of their crystal structure and magnetic properties on the individual layer thicknesses has been investigated. The annealing effects for those films have also been examined. The films with Fe and Si layer thickness of more than 85 AA clearly exhibited multilayered microstructure. H/sub c/ of the films with delta /sub Fe/ of 10 AA had a minimum value of 1.5 Oe at delta /sub Si/ of about 4 AA. For the films with delta /sub Si/ of 20 AA, H/sub c/ had a relatively high value of about 50 Oe; it reached its minimum value of about 2 Oe at delta /sub Si/ of about 40 AA after annealing at 300 degrees C for 1 h. >
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