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Abstract
Magnetocapacitance spectroscopy is introduced to study the magnetic-field-induced carrier freeze-out in narrow-gap semiconductors (NGS). By using this experimental method the magnetic-field-induced carrier freeze-out in an n-type InSb sample has been investigated at 4.2 K in a magnetic field range from 0 to 7.0 T. With increasing magnetic field between 2.0 T and 7.0 T, the activation energy of shallow donors in the sample increased from about 1.0 meV to 2.7 meV. The experimental results are compared with both theoretical and other experimental data. Good agreement is obtained between our experimental results and others, while discrepancies still exist between the experiment and theory.
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