Abstract
The paper deals with the effect of magnetic fields on the I-V characteristics of an IHC45 varistor. It is found that: (a) the nonlinear I-V characteristics of the varistor can be tuned by a magnetic field resulting in enhanced device performance; and (b) the contributions of a magnetic field on the output signal show all the characteristics of a typical transistor. The potential applications of these devices could be magnetically controlled voltage amplifiers, magnetically controlled current amplifiers, sensors, memory elements, microphone pickup with integrated pre-amplifier using a single transistor, and high temperature electronics.
Highlights
Room temperature ferromagnetic-semiconductor materials with desired properties are ideally suited for the advancement of spintronics
It was found that a series of ilmenite (FeTiO3)hematite (Fe2O3) solid solutions (IH) exhibit ferrimagnetism with the Curie point well above room temperature as well as wide band gap semiconductor behavior.[3,4]
We describe a hybrid device based on the ceramic substrate of IH with 45 atomic percent Fe2O3 which is a prominent member of the iron titanate family
Summary
Room temperature ferromagnetic-semiconductor materials with desired properties are ideally suited for the advancement of spintronics. (Received 24 September 2012; accepted 10 December 2012; published online 19 December 2012)
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