Abstract
This paper describes the properties and potential applications of a hybrid device consisting of a varistor diode and its embedded transistor whose origin lies in a magnetically tuned varistor diode. It is shown how the output current (or voltage) of a varistor based on a magnetic oxide semiconductor can be manipulated by the application of a magnetic field to produce an embedded device with characteristics similar to that of a conventional transistor. Following the tradition of microelectronics, we name it the HFET transistor where H stands for a magnetic field. Two types of embedded HFET devices are described here; one with the current–voltage (I–V) characteristics and the other with voltage–current (V–I) characteristics. Both I–V and V–I devices exhibit high degree of nonlinearly but only in the V–I mode of the HFET device well-developed saturation regions of output signals are found. The room temperature HFET in its V–I mode appears to be also a good electronic switch with well-defined “off” and “on” states. Saturated regions of output signals and electronic switching are the signature property of these HFET transistors along with the capacity of providing a good level of signal amplification. When cooled to 100 K the HFET V-I device appears to lose partially the electronic switching property but gain in signal amplifying potential. The HFET device in I–V mode does not display the defining properties of electronic switching but can amplify signals by almost 400%.
Highlights
The subject of this paper is a magnetically induced dual purpose hybrid device which can be processed on a single substrate and can be used either as a magnetically tuned varistor or as a magnetically induced transistor
The paper outlines the fabrication, properties and potential applications of magnetic field effect transistor (HFET) devices which are produced under three experimental conditions: (a) first, by subjecting the current-voltage characteristics of a varistor diode to varying magnetic fields (HFET in I-V mode); (b) second, by studying the effect of applied magnetic fields on the voltage-current characteristics of the same varistor diode (HFET in V-I mode); and (c) thirdly, repeating the same experiments by cooling the varistor sample to 100 K
Determined values of various parameters along with the potential applications of the HFET transistors have been summarized in Tables 2 and 3
Summary
The subject of this paper is a magnetically induced dual purpose hybrid device which can be processed on a single substrate and can be used either as a magnetically tuned varistor or as a magnetically induced transistor. The device exhibited transistor like I-V curves that was dependent upon gate voltages It was the first magnetic field-effect transistor based on the MOS configuration. Soon after the discovery of spin-mediated transistor another spintronic device was reported in 1995 which is based on the spin-valve effect that can be monitored in the multilayers of giant magnetoresistive materials This device uses a configuration similar to that commonly used in a bipolar junction transistor (BJT). Polycrystalline IHC45 was chosen as the substrate material because of its interesting semiconducting and magnetic properties It is an important member of the iron titanate oxide semiconductor group which was discovered around 1957 [6], [7]. The devices built on IHC 45 substrate could be of interest to space electronics, and defense electronics
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