Abstract
Artificially constructed oxide heterointerfaces have attracted much attention. Herein, the novel all‐perovskite p‐n heterojunction composed of a colossal magnetoresistive manganite La0.7Sr0.3 MnO3 (LSMO) and an n‐type transparent semiconducting BaSnO3 (BSO) is designed via optimizing the growth condition. This LSMO/BSO p‐n junction exhibits good rectification with a forward‐to‐reverse ratio of 275 at 1 V, high photo detection capability with a photo‐to‐dark current of 581.9 at ‐0.5 V, high ultraviolet light sensitivity with a UV (360 nm)‐to‐visible (532 nm) ratio of ∼2.4 × 103, and a significantly magneto‐tunable photocurrent with a variation ratio of ∼1.25 % under 532 nm illumination and 0.5 T magnetic field. As a result, combining synergistically the functionality of diode and magnetically tunable photo detector, the LSMO/BSO p‐n junction is a promising candidate for advanced magneto‐optoelectronic devices.
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