Abstract
The effect of N-doping on the microstructure and magnetic properties of thin Fe layers has been employed to construct all Fe-electrode magnetic tunnel junctions that displayed the tunneling magnetoresistance (TMR) effect. Using low nitrogen doses, a reduction in coercivity was achieved due to grain refinement, without a concurrent decrease in the saturation magnetization of the Fe films caused by the formation of crystalline iron nitride phases. It was demonstrated that this N-induced grain refinement can be applied beneficially to control the switching field of the “free” layer in magnetic trilayer structures. In general the ability to control magnetic softness without reducing saturation magnetization will prove important for incorporating high spin-polarized materials into spin valves and TMR devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
