Abstract
The time invariant behaviors of topological insulators are expected to be changed with magnetic doping, which motivate the present study. Here, we show that for Bi2−xCrxSe3 (0.01 ≤ x ≤ 0.3) thin films grown on Si, the non-trivial topological surface state is weakened by the Cr dopants. The band gap of surface is opened and monotonically increased with Cr concentration up to ∼100 meV at 10 K. Meanwhile, the semiconducting behavior is well-maintained in the bulk owing to the reduction of background doping by means of a modified growth strategy and an in situ passivation method. Besides, we also observe the existence of unconventional ferromagnetic ordering below 35 K, for which the Curie-Weiss Law and conventional/modified Arrott equations do not apply. These observations may further help us investigate extraordinary magneto-electric effect in topological insulators, and the result will also pave the way for realizing the quantized anomalous Hall effect.
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