Abstract
Magnetic properties of Ni 81Fe 19/Al 2O 3/Ni 81Fe 19 tunneling junctions are studied for different Al thicknesses and plasma oxidation times. A maximal magnetoresistance of 34% is obtained with Al thickness of 20 Å. Magnetometry reveals large exchange bias fields (∼400 Oe) over a wide range of barrier thicknesses, indicating junctions of high quality. Transport measurements conducted on junctions before and after thermal annealing show a dramatic improvement in barrier quality after annealing. Interlayer coupling fields have been measured as a function of barrier thickness for different oxidation times.
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