Abstract
An amorphous soft magnet such as CoZrNb was considered as a free layer of magnetic tunnel junctions (MTJs) for high-density MRAMs. The MTJs exhibited a tunnel magnetoresistance (MR) of about 7.5% as the free layer thickness ranged from 2 to 15 nm. When CoFe filtering was added in the free layer, the MR ratio reached 35%.
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