Magnetic tunnel junctions with Hf oxide and modified Hf oxide tunnel barriers

Abstract

Magnetic tunnel junctions (MTJ’s) with Hf oxide and modified Hf oxide barriers were fabricated by ozone oxidation. The tunnel magnetoresistance (TMR) ratio in Hf oxide junction was 13% at room temperature and 21% at 77 K. In order to understand the low TMR ratio in MTJ’s with Hf oxides compared to those with Al oxides, tunnel barriers were modified by inserting a thin Al oxide layer of 0.3 nm at the interfaces between ferromagnetic electrodes and Hf oxide insulating layers. As the Al layer of 0.3 nm was inserted at top and bottom interfaces, the TMR ratio was restored to the value of the junctions with Al oxides. This implies that the polarization of CoFe contacted with Al oxide is larger than that of CoFe contacted with Hf oxide and the low TMR ratio in MTJ’s with Hf oxides may be attributed to the reduction of spin polarization of the CoFe electrodes due to CoFe/Hf oxide interface interaction.