Abstract
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> Spin-polarized tunneling is investigated in magnetic tunnel junctions containing an ultrathin interfacial layer of <formula formulatype="inline"> <tex Notation="TeX">$\hbox{Co:TiO}_{2}$</tex></formula> magnetic semiconductor. The <formula formulatype="inline"><tex Notation="TeX">$\hbox{Co:TiO}_{2}$</tex> </formula> layers (0 to 1 nm thick) are inserted at the <formula formulatype="inline"> <tex Notation="TeX">$\hbox{SrTiO}_{3}/\hbox{Co}$</tex></formula> interface in <formula formulatype="inline"><tex Notation="TeX">$\hbox{La}_{0.67}\hbox{Sr}_{0.33}\hbox{MnO}_{3}/\hbox{SrTiO}_{3}/\hbox{Co}$</tex> </formula> tunnel junctions. For all junctions we find a negative tunnel magnetoresistance, which decreases upon the insertion of <formula formulatype="inline"><tex Notation="TeX">$\hbox{Co:TiO}_{2}$</tex> </formula>, while the junction resistance increases strongly. This suggests that the ultrathin <formula formulatype="inline"><tex Notation="TeX">$\hbox{Co:TiO}_{2}$</tex> </formula> is a paramagnetic insulator that acts as an additional tunnel barrier, in contrast to thick (180 nm) layers grown under comparable conditions, which exhibit metallic impurity band conduction and room-temperature ferromagnetism. </para>
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