Abstract
Magnetic tunnel junctions were fabricated with epitaxially grown Co2MnAl bottom electrodes combined with an Al–O tunnel barrier using a magnetron sputtering system. The epitaxial Co2MnAl electrode had very low surface roughness of 0.2nm and a highly ordered B2 structure. Magnetic tunnel junctions (MTJs) with a stacking structure of epitaxial-Co2MnAl∕Al–O∕CoFe∕IrMn exhibited large tunnel magnetoresistance (TMR) ratios of 65% at room temperature and 83% at 10K. The TMR ratios were larger than those of a MTJ with a Co2MnAl polycrystalline electrode.
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