Abstract

Spiking Neural Networks (SNNs) have emerged as a powerful neuromorphic computing paradigm to carry out classification and recognition tasks. Nevertheless, the general purpose computing platforms and the custom hardware architectures implemented using standard CMOS technology, have been unable to rival the power efficiency of the human brain. Hence, there is a need for novel nanoelectronic devices that can efficiently model the neurons and synapses constituting an SNN. In this work, we propose a heterostructure composed of a Magnetic Tunnel Junction (MTJ) and a heavy metal as a stochastic binary synapse. Synaptic plasticity is achieved by the stochastic switching of the MTJ conductance states, based on the temporal correlation between the spiking activities of the interconnecting neurons. Additionally, we present a significance driven long-term short-term stochastic synapse comprising two unique binary synaptic elements, in order to improve the synaptic learning efficiency. We demonstrate the efficacy of the proposed synaptic configurations and the stochastic learning algorithm on an SNN trained to classify handwritten digits from the MNIST dataset, using a device to system-level simulation framework. The power efficiency of the proposed neuromorphic system stems from the ultra-low programming energy of the spintronic synapses.

Highlights

  • Emerging nonvolatile memory technologies including phase-change memories[4], memristors[5], and multilayer spintronic devices[6,7] have been demonstrated to realize the synapses in a power efficient manner

  • SNNs are a powerful neuromorphic computing paradigm that aim to mimic the computational efficiency of the human brain to solve complex inference tasks

  • We put forward a three terminal Magnetic Tunnel Junction (MTJ)-heavy metal (HM) heterostructure as a stochastic binary synapse

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Summary

Synapse for a Spiking Neural

Spiking Neural Networks (SNNs) have emerged as a powerful neuromorphic computing paradigm to carry out classification and recognition tasks. An appropriate amount of current needs to be passed through the HM layer to switch the MTJ conductance states with the determined probability It can be inferred from the stochastic STDP dynamics (Fig. 5) and the MTJ switching characteristics for a programming pulse width of 1 ns (Fig. 4(a)) that the write current decreases linearly with the difference in spike times of pre-neuron and post-neuron pairs. (b) SPICE simulation of the STDP learning circuit, wherein the programming voltage is proportional to the difference in the spike times of pre-neuron and post-neuron pairs This drives a PMOS operating in saturation to produce a linearly decreasing write current. The superior performance of the crossbar organization can be attributed to the localized arrangement of the neurons and synaptic memories

Results and Discussion
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