Abstract
Progress in developing operative high-density magnetoresistive random access memory (MRAM) devices relies critically on tailoring the magnetic switching occurring in arrays of small patterned pseudo spin valve (PSV) elements. Co/Cu/NiFe PSV films, produced by sputtering in the presence of a magnetic field, have an in-plane anisotropy and switching fields of typically 10 Oe for the soft NiFe and 40 Oe for the hard Co. These films were patterned into arrays of elliptical and circular elements with dimensions of 80 nm to 10 /spl mu/m. The layered structure in these large-area arrays of compositionally modulated PSV elements is preserved through the patterning processes. Hysteresis measurements of the dot arrays show that the switching field of the hard layer increases significantly with decreasing element size, reaching 600 Oe for the smallest elements. Additionally, in patterned elements the soft layer switches prior to field reversal due to magnetostatic coupling between the layers, leading to antiparallel alignment at remanence.
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