Abstract
Taking account the presence of external magnetic field, we study the conductance properties in spin field-effect transistors (SFET). It is shown that the conductance of the SFET exhibits an excellent magnetic switching characteristic for high potential barriers, and it is more and more pronounced with the potential barrier strength increasing. According to the effect, we can switch the SFET on or off by tuning the strength of the magnetic field. We also study how the conductance of the SFET is manipulated by spin–orbit coupling strength and spin polarization in source and drain.
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