Abstract
Co/AlO x / Co magnetic tunnel junctions in both multijunction arrays and double-tunnel junction geometries have been studied. The junctions exhibit magnetoresistance (MR) and change their resistance by ∼10% depending on the relative magnetic orientation of the tunnel junction electrodes. MR measurements show a strong dependence on the device geometry. We find that it is necessary to form tunnel junctions with electrode width ∼70 nm for the magnetic switching at the tunnel junction to be clean and single domain like.
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