Abstract
The article deals with the filamentous Si0,97Ge0,03 crystals with transverse dimensions of 40 ± 2 μm grown by the method of chemical transport reactions in the closed bromide system using gold as a growth initiator. The focus of research was the influence of proton irradiation with doses up to 1∙1017 p+/cm-2 and the following thermal treatments at temperatures of 200 - 500°C on the magnetic susceptibility of these crystals. The dependence of the magnetic susceptibility on the intensity of the magnetic field of the proton irradiated filamentous Si0,97Ge0,03 crystals is described within the framework of the Langevin atom paramagnetism model and explained by the formation of defects of the vacancy type. The revealed increase in the radiation stability of Si0,97Ge0,03 crystals followed the combined effect of radiation and subsequent thermal treatments.
Highlights
Filamentous crystals (FC) are widely used in various fields of human practice due to their unique shape, size, perfect structure, high elasticity and mechanical strength.Studying the behavior of crystals under the influence of radiation, proton irradiation in particular, is interesting in terms of the creation of radiation-resistant sensors [1, 2]
High perfection of the structure of filamentous crystals (FC) allows us to simulate the defects formed in the crystals in the process of irradiation [3,4,5]
Samples of this very composition were chosen for the experiment since they are characterized by high perfection of structure and high micromechanical characteristics [6, 7]
Summary
Filamentous crystals (FC) are widely used in various fields of human practice (aviation, rocket and space, medical, transport, telecommunications, etc.) due to their unique shape, size, perfect structure, high elasticity and mechanical strength.Studying the behavior of crystals under the influence of radiation, proton irradiation in particular, is interesting in terms of the creation of radiation-resistant sensors [1, 2]. High perfection of the structure of filamentous crystals (FC) allows us to simulate the defects formed in the crystals in the process of irradiation [3,4,5]. The purpose of this work was to study the effects of proton irradiation with doses up to 1∙1017 р+/cm and annealing at temperatures of 200 - 500oC on the magnetic susceptibility of filamentous Si1-xGex (x = 0.03). Samples of this very composition were chosen for the experiment since they are characterized by high perfection of structure and high micromechanical characteristics [6, 7]
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