Abstract
In this research, the effect of transition metal Zn doping to Bi PbSrCaCuO were studied. Various weight ratio (0.2, 0.4, 0.6, 0.8, and 1) of Zn to BiPbSrCaCuO were prepared by using pulsed laser deposition Method (PLD). The effect of Zn doping to BiPbSrCaCuO were examined using a variety of characterization techniques, X-ray diffraction and vibrating sample magnetometer (VSM) this examination was done in the Islamic republic of Iran at University of Tehran. The XRD, reveals that Zn-doped BiPbSrCaCuO film crystallizes in tetragonal structure with mixture of two phases 2212 and 2223. The high phase 2223 increase with increasing Zn dopant especially was found higher at (Zn= 0.6, 0.8). The electrical properties of undoped and doped samples, were measured by four probe technique, the phase transition from normal resistivity to absence resistivity occurring at temperature called critical temperature Tc the values of TC for variable Zn substitution in BiPbSrCaCuO recorded (97, 90, 95, 102) and super conducting behavior. The saturation magnetization (MS) was found higher for undoped as compared to doped samples.
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