Abstract
The magnetic structure of the compensated ferromagnet-multiferroic interface has been considered. The law governing the decrease of distortions of magnetic order parameters with increasing distance from the interface has been found. An expression for the energy of interlayer interaction of magnetic order parameters has been derived, and it has been shown that its magnitude is determined by the exchange interaction. The condition for magnetization switching of the ferromagnetic layer by an electric field applied to the multiferroic layer has been formulated. It has been demonstrated that the magnetoelectric effect and weak ferromagnetism are not prerequisites to the development of electric field-switchable magnetoresistive memory.
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