Abstract

The automotive industry requires magnetic sensors exhibiting highly linear output within a dynamic range as wide as ±1 kOe. A simple model predicts that the magneto-conductance (G-H) curve in a magnetic tunnel junction (MTJ) is perfectly linear, whereas the magneto-resistance (R-H) curve inevitably contains a finite nonlinearity. We prepared two kinds of MTJs using in-plane or perpendicularly magnetized synthetic antiferromagnetic (i-SAF or p-SAF) reference layers and investigated their sensor performance. In the MTJ with the i-SAF reference layer, the G-H curve did not necessarily show smaller nonlinearities than those of the R-H curve with different dynamic ranges. This is because the magnetizations of the i-SAF reference layer start to rotate at a magnetic field even smaller than the switching field (Hsw) measured by a magnetometer, which significantly affects the tunnel magnetoresistance (TMR) effect. In the MTJ with the p-SAF reference layer, the G-H curve showed much smaller nonlinearities than those of the R-H curve, thanks to a large Hsw value of the p-SAF reference layer. We achieved a nonlinearity of 0.08% FS (full scale) in the G-H curve with a dynamic range of ±1 kOe, satisfying our target for automotive applications. This demonstrated that a reference layer exhibiting a large Hsw value is indispensable in order to achieve a highly linear G-H curve.

Highlights

  • Magnetic tunnel junctions (MTJs) exhibiting a giant tunnel magnetoresistance (TMR) effect[1,2,3,4,5] have been attracting considerable attention for potential application to various magnetic sensors in the automotive industry

  • We investigated magnetic-sensor performance evaluated from the G-H curves in magnetic tunnel junctions using in-plane magnetized synthetic antiferromagnetic (i-SAF) or perpendicularly magnetized synthetic antiferromagnetic (p-SAF) reference layers

  • We investigated the sensor performance of the i-SAF and p-SAF MTJs

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Summary

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Tunnel magnetoresistance of 604% at by suppression of Ta diffusion in pseudo-spin-valves annealed at high temperature. Ando1,3 1Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 6-6-05, Sendai 980-8579, Japan 2DENSO Corporation, Showa-machi 1-1, Kariya, Aichi 448-4661, Japan 3Center for Spintronics Research Network, Tohoku University, Sendai 980-8579, Japan (Received 6 March 2018; accepted 3 April 2018; published online 11 April 2018)

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