Abstract
A simple crystallographic model based upon lattice compression ratios is applied to analyze and characterize bonding behavior, bandgap energy, and related basic properties of rare earth chalcogenides and chalcogenide spinels. The basic properties of typical magnetic semiconductors, EuX and AB2X4 (X=O, S, Se, and Te) are discussed relative to this model. Effects of dopants on the magnetic, optical, and electrical properties are analyzed using available data. The extrinsic properties of chalcogenide spinels are interpreted with newly developed ionic distributions. Differences between EuX and chalcogenide spinels are discussed. Further examination of available models is necessary to explain resistivity anomaly in chalcogenide spinels. The present analysis provides guidance for selecting room temperature magnetic semiconductor material.
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