Abstract
Perpendicular pseudo-spin-valve films with structure Ti∕CoCrPt∕Ti∕CoCrPt were fabricated by UHV sputtering. The Ti serves both as a seed layer, to promote a perpendicular c-axis orientation, and as a spacer between the magnetic layers. The films show characteristic two-step switching with a wide plateau corresponding to antiparallel alignments of the magnetic layers. For a 5nm Ti∕5nm CoCrPt∕5nm Ti∕20nm CoCrPt, antiparallel alignment exists between 70 and 345Oe. Minor loops demonstrate switching of the thin layer, in addition to time-dependent magnetization reversal attributed to creep in the magnetization as a result of growth of reversed domains. Magnetic force microscopy and time-dependent magnetization measurements suggest that the domain propagation field is lower than the field necessary for domain nucleation.
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